UF1AHA0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1A DO204AL

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Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1A DO204AL

Technical Specifications

Parameters and characteristics for this part

Specification	UF1AHA0G

Capacitance @ Vr, F	17 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AL, DO-41, Axial
Qualification	AEC-Q101
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-204AL (DO-41)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Grade	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Qualification	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Reverse Recovery Time (trr)	Package / Case	Mounting Type
Taiwan Semiconductor Corporation UF1AHR0G	1 V	1 A	Automotive	5 µA	17 pF	AEC-Q101	200 mA 500 ns	50 V	Standard	150 °C	-55 °C	DO-204AL (DO-41)	50 ns	Axial DO-204AL DO-41	Through Hole
Taiwan Semiconductor Corporation UF1AHA0G	1 V	1 A	Automotive	5 µA	17 pF	AEC-Q101	200 mA 500 ns	50 V	Standard	150 °C	-55 °C	DO-204AL (DO-41)	50 ns	Axial DO-204AL DO-41	Through Hole

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General part information

Diode 50 V 1A Through Hole DO-204AL (DO-41)

Technical documentation and resources