IPB065N15N3GE8187ATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 150V 130A TO263-7

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Obsolete

Infineon Technologies

MOSFET N-CH 150V 130A TO263-7

Technical Specifications

Parameters and characteristics for this part

Specification	IPB065N15N3GE8187ATMA1

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Input Capacitance (Ciss) (Max) @ Vds	7300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Package / Case	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPB065N06L G	4.5 V 10 V	250 W	157 nC	6.2 mOhm	MOSFET (Metal Oxide)	2 V	-55 °C	175 ░C	PG-TO263-3-2	60 V	5100 pF	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	20 V
Infineon Technologies IPB065N15N3GE8187ATMA1	8 V 10 V	300 W		6.5 mOhm	MOSFET (Metal Oxide)	4 V	-55 °C	175 ░C	PG-TO263-7	150 V		N-Channel	D2PAK TO-263-7	Surface Mount	20 V	7300 pF	130 A	93 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 130A (Tc) 300W (Tc) Surface Mount PG-TO263-7

Technical documentation and resources

No documents available