RFD16N05LSM

Obsolete

Harris Corporation

N-CHANNEL POWER MOSFET

Search across all available documentation for this part.

Obsolete

Harris Corporation

N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	RFD16N05LSM

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	47 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

N-CHANNEL POWER MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type
Harris Corporation RFD16N05LSM	80 nC	4 V, 5 V	50 V	10 V	Surface Mount	16 A	DPAK (2 Leads + Tab), SC-63, TO-252-3	-55 °C	150 °C	MOSFET (Metal Oxide)	60 W	TO-252AA	2 V	47 mOhm	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	412	$ 0.73

General part information

N-Channel 50 V 16A (Tc) 60W (Tc) Surface Mount TO-252AA

Technical documentation and resources

No documents available