N-CHANNEL POWER MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs (Max) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Power Dissipation (Max) | Supplier Device Package | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Harris Corporation RFD16N05LSM | 80 nC | 4 V, 5 V | 50 V | 10 V | Surface Mount | 16 A | DPAK (2 Leads + Tab), SC-63, TO-252-3 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 60 W | TO-252AA | 2 V | 47 mOhm | N-Channel |