BCR505E6778HTSA1

Obsolete

Infineon Technologies

TRANS PREBIAS NPN 50V SOT23

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Obsolete

Infineon Technologies

TRANS PREBIAS NPN 50V SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	BCR505E6778HTSA1

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	330 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	PG-SOT23
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Resistor - Base (R1)	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package
Infineon Technologies BCR505E6778HTSA1	NPN - Pre-Biased	2.2 kOhm	Surface Mount	70	100 MHz	330 mW	100 nA	10 kOhms	500 mA	50 V	SC-59 SOT-23-3 TO-236-3	300 mV	PG-SOT23

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 100 MHz 330 mW Surface Mount PG-SOT23

Technical documentation and resources