TSM018NA03CR RLG

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 30V 185A 8PDFN

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Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 30V 185A 8PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM018NA03CR RLG

Current - Continuous Drain (Id) @ 25°C	185 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	3479 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	104 W
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	8-PDFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
Taiwan Semiconductor Corporation TSM018NA03CR RLG	Surface Mount	56 nC	185 A	4.5 V 10 V	20 V	2.5 V	104 W	-55 °C	150 °C	N-Channel	3479 pF	8-PDFN (5x6)	8-PowerTDFN	MOSFET (Metal Oxide)	1.8 mOhm	30 V

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General part information

N-Channel 30 V 185A (Tc) 104W (Tc) Surface Mount 8-PDFN (5x6)

Technical documentation and resources

No documents available