IPB06CN10N G

Obsolete

Infineon Technologies

MOSFET N-CH 100V 100A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 100A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IPB06CN10N G

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	139 nC
Input Capacitance (Ciss) (Max) @ Vds	9200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	214 W
Rds On (Max) @ Id, Vgs	6.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IPB06CN10N G	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	Surface Mount	214 W	6.2 mOhm	100 V	4 V	10 V	100 A	N-Channel	139 nC	20 V	MOSFET (Metal Oxide)	9200 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 100A (Tc) 214W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources