STP75NF68

Obsolete

STMicroelectronics

MOSFET N-CH 68V 80A TO220-3

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Obsolete

STMicroelectronics

MOSFET N-CH 68V 80A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	STP75NF68

Drain to Source Voltage (Vdss)	68 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Input Capacitance (Ciss) (Max) @ Vds	2550 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
STMicroelectronics STP75N75F4	5015 pF	TO-220	4 V	11 mOhm	78 A	75 V	N-Channel	MOSFET (Metal Oxide)	Through Hole	10 V	-55 °C	175 ░C	76 nC	150 W	TO-220-3	20 V
STMicroelectronics STP75N20	3260 pF	TO-220	4 V	34 mOhm	75 A	200 V	N-Channel	MOSFET (Metal Oxide)	Through Hole	10 V	-55 °C	150 °C			TO-220-3	20 V	84 nC	190 W
STMicroelectronics STP75NF68	2550 pF	TO-220	4 V	14 mOhm		68 V	N-Channel	MOSFET (Metal Oxide)	Through Hole	10 V	-55 °C	175 ░C			TO-220-3	20 V	75 nC	190 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 68 V 80A (Tc) 190W (Tc) Through Hole TO-220

Technical documentation and resources