IRF6715MTRPBF

Obsolete

Infineon Technologies

MOSFET N-CH 25V 34A DIRECTFET

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Obsolete

Infineon Technologies

MOSFET N-CH 25V 34A DIRECTFET

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6715MTRPBF

Current - Continuous Drain (Id) @ 25°C	34 A, 180 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	59 nC
Input Capacitance (Ciss) (Max) @ Vds	5340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MX
Rds On (Max) @ Id, Vgs [Max]	1.6 mOhm
Supplier Device Package	DIRECTFET™ MX
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	FET Type	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IRF6715MTRPBF	N-Channel	DirectFET™ Isometric MX	20 V	34 A 180 A	25 V	59 nC	MOSFET (Metal Oxide)	Surface Mount	DIRECTFET™ MX	4.5 V 10 V	150 °C	-40 °C	5340 pF	1.6 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 34A (Ta), 180A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount DIRECTFET™ MX

Technical documentation and resources