TPH1R306P1,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.00128 Ω@10V, SOP ADVANCE, U-MOSⅨ-H
TPH1R306P1,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.00128 Ω@10V, SOP ADVANCE, U-MOSⅨ-H
Description
General part information
TPH1R306P1 Series
12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.00128 Ω@10V, SOP Advance, U-MOSⅨ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TPH1R306P1,L1Q |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 100 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 91 nC |
| Input Capacitance (Ciss) (Max) | 8100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 5 mm |
| Package Name | 8-SOP Advance |
| Package Width | 5 mm |
| Power Dissipation (Max) | 960 mW, 170 W |
| Rds On (Max) | 1.28 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
TPH1R306P1,L1Q | Datasheet
MOSFET Self-Turn-On Phenomenon
Simplified CFD Model Application Note
Maximum Ratings: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Selection Guide MOSFETs 2025 Rev1.0
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
TPH1R306P1 Data sheet/Japanese
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Derating of the MOSFET Safe Operating Area
MOSFET SPICE model grade
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Motor Control (Vacuum Cleaners)
Avalanche energy calculation
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Electrical Characteristics: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Calculating the Temperature of Discrete Semiconductor Devices
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
MOSFET Secondary Breakdown
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Structures and Characteristics: Power MOSFET Application Notes
Resonant Circuits and Soft Switching