CMLDM7120G TR PBFREE

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Central Semiconductor Corp

MOSFET N-CH 20V 1A SOT563

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Central Semiconductor Corp

MOSFET N-CH 20V 1A SOT563

Technical Specifications

Parameters and characteristics for this part

Specification	CMLDM7120G TR PBFREE

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.4 nC
Input Capacitance (Ciss) (Max) @ Vds	220 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SOT-666, SOT-563
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs [Max]	100 mOhm
Supplier Device Package	SOT-563
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1.2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Vgs (Max) [Max]	Technology	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Central Semiconductor Corp CMLDM7120G TR PBFREE	220 pF	N-Channel	4 V	1.5 V	20 V	150 °C	-65 °C	Surface Mount	100 mOhm	1.2 V	1 A	SOT-563	SOT-563 SOT-666	8 V	MOSFET (Metal Oxide)	150 mW	2.4 nC

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General part information

N-Channel 20 V 1A (Ta) 150mW (Ta) Surface Mount SOT-563

Technical documentation and resources