BP104
ActiveVishay General Semiconductor - Diodes Division
SENSOR PHOTODIODE 950NM 2DIP
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BP104
ActiveVishay General Semiconductor - Diodes Division
SENSOR PHOTODIODE 950NM 2DIP
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | BP104 |
|---|---|
| Active Area | 7.5 mm˛ |
| Current - Dark (Typ) | 2 nA |
| Diode Type | PIN |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 100 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 0.2 in |
| Package / Case | 2-DIP |
| Package / Case | 5.1 mm |
| Spectral Range [Max] | 1050 nm |
| Spectral Range [Min] | 870 nm |
| Viewing Angle | 130 ° |
| Voltage - DC Reverse (Vr) (Max) [Max] | 60 V |
| Wavelength | 950 nm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 0.81 | |
| 10 | $ 0.52 | |||
| 100 | $ 0.38 | |||
| 500 | $ 0.36 | |||
Description
General part information
BP104 Series
Photodiode 950nm 130° 2-DIP (0.200", 5.10mm)
Documents
Technical documentation and resources