Specification	SI9634DY-T1-GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	6.2 A
Current - Continuous Drain (Id) (Tc)	8 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Max)	11 nC
Input Capacitance (Ciss) (Max)	420 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power - Max (Ta)	2 W
Power - Max (Tc)	3.6 W
Rds On (Max)	29 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	3 V

SI9634 Series

Part	Package Length	Package Name	Package Width	Technology	Power - Max (Tc)	Power - Max (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Channel Count	Configuration	Configuration - Features	Rds On (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)
Vishay Dale SI9634DY-T1-GE3	0.154 in	8-SOIC	3.9 mm	MOSFET (Metal Oxide)	3.6 W	2 W	-55 °C	150 °C	Surface Mount	6.2 A	8 A	3 V	2	N-Channel	Dual	29 mOhm	420 pF	60 V	11 nC

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