IPB010N06NATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 1 MOHM;
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IPB010N06NATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 1 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPB010N06NATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 45 A, 180 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 208 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 15000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-263-7, D2PAK |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs | 1 mOhm |
| Supplier Device Package | PG-TO263-7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB010 Series
The IPB010N06N is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
Documents
Technical documentation and resources