Specification	SI7868ADP-T1-E3

Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	150 nC
Input Capacitance (Ciss) (Max)	6110 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	5.4 W, 83 W
Rds On (Max)	2.25 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max)	1.6 V

SI7868 Series

Part	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Technology	Package Name	Gate Charge (Max)	Rds On (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Package / Case	Mounting Type	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)
Vishay Dale SI7868ADP-T1-GE3	6110 pF	1.6 V	20 V	MOSFET (Metal Oxide)	PowerPAK® SO-8	150 nC	2.25 mOhm	N-Channel	40 A	PowerPAK® SO-8	Surface Mount	5.4 W 83 W	-55 °C	150 °C	10 V	4.5 V	16 V
Vishay Dale SI7868ADP-T1-E3	6110 pF	1.6 V	20 V	MOSFET (Metal Oxide)	PowerPAK® SO-8	150 nC	2.25 mOhm	N-Channel	40 A	PowerPAK® SO-8	Surface Mount	5.4 W 83 W	-55 °C	150 °C	10 V	4.5 V	16 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources