APT10DC120HJ

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Microsemi Corporation

BRIDGE RECT 1P 1.2KV 10A SOT227

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Microsemi Corporation

BRIDGE RECT 1P 1.2KV 10A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	APT10DC120HJ

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	200 µA
Diode Type	Single Phase
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Supplier Device Package	SOT-227
Technology	Silicon Carbide Schottky
Voltage - Forward (Vf) (Max) @ If	1.8 V
Voltage - Peak Reverse (Max) [Max]	1.2 kV

Part	Package / Case	Technology	Mounting Type	Diode Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Peak Reverse (Max) [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If
Microsemi Corporation APT10DC120HJ	SOT-227-4 miniBLOC	Silicon Carbide Schottky	Chassis Mount	Single Phase	-55 °C	175 ░C	SOT-227	200 µA	1.2 kV	10 A	1.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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General part information

Bridge Rectifier Single Phase Silicon Carbide Schottky 1.2 kV Chassis Mount SOT-227

Technical documentation and resources

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