AOTS21115C

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Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 6.6A 6TSOP

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Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 6.6A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	AOTS21115C

Current - Continuous Drain (Id) @ 25°C	6.6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	930 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-74, SOT-457
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Supplier Device Package
Alpha & Omega Semiconductor Inc. AOTS21115C	40 mOhm	MOSFET (Metal Oxide)	2.5 W	20 V	6.6 A	SC-74 SOT-457	-55 °C	150 °C	930 pF	17 nC	950 mV	8 V	1.8 V 4.5 V	Surface Mount	P-Channel	6-TSOP

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General part information

P-Channel 20 V 6.6A (Ta) 2.5W (Ta) Surface Mount 6-TSOP

Technical documentation and resources