SPI80N10L

Obsolete

Infineon Technologies

MOSFET N-CH 100V 80A TO262-3

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 80A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPI80N10L

Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	240 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4540 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	14 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies SPI80N10L	-55 °C	175 ░C	2 V	100 V	14 mOhm	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	250 W	4540 pF	MOSFET (Metal Oxide)	20 V	240 nC	Through Hole	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 80A (Tc) 250W (Tc) Through Hole PG-TO262-3-1

Technical documentation and resources