SUP75N03-04-E3

Obsolete

Vishay Siliconix

MOSFET N-CH 30V 75A TO220AB

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DocumentsIRLZ44

Obsolete

Vishay Siliconix

MOSFET N-CH 30V 75A TO220AB

DocumentsIRLZ44

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 75A (Tc) 3.7W (Ta), 187W (Tc) Through Hole TO-220AB

Technical documentation and resources

Parameters and characteristics commom to parts in this series

Specification	SUP75N03-04-E3	SUP75 Series

Current - Continuous Drain (Id) @ 25°C	75 A	75 A
Drain to Source Voltage (Vdss)	30 V	30 - 55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V	4.5 - 10 V
FET Type	N-Channel	P-Channel, N-Channel
Gate Charge (Qg) (Max) @ Vgs	-	225 - 240 nC
Input Capacitance (Ciss) (Max) @ Vds	-	9000 pF
Input Capacitance (Ciss) (Max) @ Vds	-	8500 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	175 ░C	175 ░C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-220-3	TO-220-3
Power Dissipation (Max)	187 W	187 W
Power Dissipation (Max)	3.7 W	3.7 W
Rds On (Max) @ Id, Vgs	4 mOhm	4 - 8 mOhm
Rds On (Max) @ Id, Vgs	-	7 mOhm
Supplier Device Package	TO-220AB	TO-220AB
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	20 V	20 V
Vgs(th) (Max) @ Id	3 V	3 V

MOSFET P-CH 30V 75A TO220AB

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Power Dissipation (Max)
Vishay Siliconix SUP75P03-07-E3	30 V	4.5 V, 10 V	MOSFET (Metal Oxide)	7 mOhm	P-Channel	9000 pF	TO-220-3	240 nC	75 A	TO-220AB	Through Hole	3 V	20 V	-55 °C	175 ░C
Vishay Siliconix SUP75P05-08-E3	55 V	4.5 V, 10 V	MOSFET (Metal Oxide)		P-Channel		TO-220-3	225 nC	75 A	TO-220AB	Through Hole	3 V	20 V	-55 °C	175 ░C	8 mOhm	8500 pF
Vishay Siliconix SUP75N03-04-E3	30 V	4.5 V, 10 V	MOSFET (Metal Oxide)		N-Channel		TO-220-3		75 A	TO-220AB	Through Hole	3 V	20 V	-55 °C	175 ░C	4 mOhm		187 W	3.7 W