MOSFET P-CH 30V 75A TO220AB
| Part | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Rds On (Max) @ Id, Vgs [Max] | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Mounting Type | Vgs(th) (Max) @ Id | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUP75P03-07-E3 | 30 V | 4.5 V, 10 V | MOSFET (Metal Oxide) | 7 mOhm | P-Channel | 9000 pF | TO-220-3 | 240 nC | 75 A | TO-220AB | Through Hole | 3 V | 20 V | -55 °C | 175 ░C | ||||
Vishay Siliconix SUP75P05-08-E3 | 55 V | 4.5 V, 10 V | MOSFET (Metal Oxide) | P-Channel | TO-220-3 | 225 nC | 75 A | TO-220AB | Through Hole | 3 V | 20 V | -55 °C | 175 ░C | 8 mOhm | 8500 pF | ||||
Vishay Siliconix SUP75N03-04-E3 | 30 V | 4.5 V, 10 V | MOSFET (Metal Oxide) | N-Channel | TO-220-3 | 75 A | TO-220AB | Through Hole | 3 V | 20 V | -55 °C | 175 ░C | 4 mOhm | 187 W | 3.7 W |