IR21064S

Obsolete

Infineon Technologies

IC GATE DRVR HI/LOW SIDE 14SOIC

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IC GATE DRVR HI/LOW SIDE 14SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	IR21064S

Channel Type	Independent
Driven Configuration	High-Side, Low-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.9 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	14-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	150 ns
Rise / Fall Time (Typ) [custom]	50 ns
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Number of Drivers	Logic Voltage - VIL, VIH	Gate Type	Channel Type	Supplier Device Package	Driven Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Max]	Operating Temperature [Min]	High Side Voltage - Max (Bootstrap) [Max]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Mounting Type	Input Type	Voltage - Supply [Max]	Voltage - Supply [Min]
Infineon Technologies IR21064PBF	2	0.8 V 2.9 V	IGBT MOSFET N-Channel MOSFET	Independent	14-DIP	High-Side Low-Side	14-DIP	7.62 mm	0.3 "	150 °C	-40 °C	600 V	150 ns	50 ns	Through Hole	Non-Inverting	20 V	10 VDC
Infineon Technologies IR21064	2	0.8 V 2.9 V	IGBT N-Channel MOSFET	Independent	14-DIP	High-Side Low-Side	14-DIP	7.62 mm	0.3 "	150 °C	-40 °C	600 V	150 ns	50 ns	Through Hole	Non-Inverting	20 V	10 VDC
Infineon Technologies IR21064STRPBF	2	0.8 V 2.9 V	IGBT N-Channel MOSFET	Independent		High-Side Low-Side	14-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	600 V	150 ns	50 ns	Surface Mount	Non-Inverting	20 V	10 VDC
Infineon Technologies IR21064SPBF	2	0.8 V 2.9 V	IGBT N-Channel MOSFET	Independent		High-Side Low-Side	14-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	600 V	150 ns	50 ns	Surface Mount	Non-Inverting	20 V	10 VDC
Infineon Technologies IR21064S	2	0.8 V 2.9 V	IGBT N-Channel MOSFET	Independent		High-Side Low-Side	14-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	600 V	150 ns	50 ns	Surface Mount	Non-Inverting	20 V	10 VDC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

High-Side or Low-Side Gate Driver IC Non-Inverting 14-SOIC

Technical documentation and resources

No documents available