VN2410L-G-P014
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V, 10 OHM
Deep-Dive with AI
Search across all available documentation for this part.
VN2410L-G-P014
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V, 10 OHM
Deep-Dive with AI
Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | VN2410L-G-P014 | VN2410 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 190 mA | 190 mA |
| Drain to Source Voltage (Vdss) | 240 V | 240 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 2.5 V | 2.5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V | 10 V |
| FET Type | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 125 pF | 125 pF |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 |
| Power Dissipation (Max) | 1 W | 1 W |
| Rds On (Max) @ Id, Vgs [Max] | 10 Ohm | 10 Ohm |
| Supplier Device Package | TO-92-3 | TO-92-3 |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 2 V | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Box (TB) | 2000 | $ 0.98 | |
| Microchip Direct | AMMO | 1 | $ 1.28 | |
| 25 | $ 1.06 | |||
| 100 | $ 0.98 | |||
| 1000 | $ 0.80 | |||
| 5000 | $ 0.75 | |||
| 10000 | $ 0.69 | |||
VN2410 Series
MOSFET, N-Channel Enhancement-Mode, 240V, 10 Ohm
| Part | Mounting Type | Technology | Vgs(th) (Max) @ Id | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology VN2410L-G-P013 | Through Hole | MOSFET (Metal Oxide) | 2 V | 20 V | 125 pF | 1 W | 190 mA | TO-92-3 | 240 V | 10 Ohm | TO-226-3, TO-92-3 | 10 V | 2.5 V | -55 °C | 150 °C | N-Channel |
Microchip Technology VN2410L-G-P014 | Through Hole | MOSFET (Metal Oxide) | 2 V | 20 V | 125 pF | 1 W | 190 mA | TO-92-3 | 240 V | 10 Ohm | TO-226-3, TO-92-3 | 10 V | 2.5 V | -55 °C | 150 °C | N-Channel |
Description
General part information
VN2410 Series
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.