TK15A60D(STA4,Q,M)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 15A TO220SIS

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 15A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK15A60D(STA4,Q,M)

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	370 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
Toshiba Semiconductor and Storage TK15A60U(STA4,Q,M)	Through Hole	40 W	950 pF	10 V	15 A	TO-220-3 Full Pack	600 V	N-Channel	30 V	17 nC	TO-220SIS	150 °C	300 mOhm	MOSFET (Metal Oxide)
Toshiba Semiconductor and Storage TK15A60D(STA4,Q,M)	Through Hole		2600 pF	10 V	15 A	TO-220-3 Full Pack	600 V	N-Channel	30 V		TO-220SIS	150 °C	370 mOhm	MOSFET (Metal Oxide)	45 nC	50 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 15A (Ta) 50W (Tc) Through Hole TO-220SIS

Technical documentation and resources