MMIX1F520N075T2

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IXYS

MOSFET N-CH 75V 500A 24SMPD

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IXYS

MOSFET N-CH 75V 500A 24SMPD

Technical Specifications

Parameters and characteristics for this part

Specification	MMIX1F520N075T2

Current - Continuous Drain (Id) @ 25°C	500 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	545 nC
Input Capacitance (Ciss) (Max) @ Vds	41000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	24-PowerSMD, 21 Leads
Power Dissipation (Max) [Max]	830 W
Rds On (Max) @ Id, Vgs [Max]	1.6 mOhm
Supplier Device Package	24-SMPD
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]
IXYS MMIX1F520N075T2	830 W	75 V	545 nC	Surface Mount	MOSFET (Metal Oxide)	41000 pF	20 V	24-SMPD	1.6 mOhm	500 A	N-Channel	24-PowerSMD 21 Leads	5 V	10 V	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 75 V 500A (Tc) 830W (Tc) Surface Mount 24-SMPD

Technical documentation and resources