SSM6L12TU,LF

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V/20V 0.5A UF6

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V/20V 0.5A UF6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L12TU,LF

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	20 V, 30 V
Input Capacitance (Ciss) (Max) @ Vds	245 pF, 218 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	260 mOhm, 145 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.1 V

Part	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Power - Max [Max]	Operating Temperature	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM6L12TU,LF	20 V 30 V	Surface Mount	6-SMD Flat Leads	500 mW	150 °C	MOSFET (Metal Oxide)	UF6	218 pF 245 pF	N and P-Channel	500 mA	145 mOhm 260 mOhm	1.1 V

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General part information

Mosfet Array 30V, 20V 500mA (Ta) 500mW Surface Mount UF6

Technical documentation and resources