BPW17N

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Vishay Semiconductor Opto Division

PHOTOTRANSISTOR 450 TO 1040 NM

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Active

Vishay Semiconductor Opto Division

PHOTOTRANSISTOR 450 TO 1040 NM

Technical Specifications

Parameters and characteristics for this part

Specification	BPW17N

Current - Collector (Ic) (Max)	1 mA
Current - Dark (Id) (Max) [Max]	200 nA
Mounting Type	Through Hole
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Orientation	Top View
Package / Case	Radial
Power - Max [Max]	100 mW
Viewing Angle	24 °
Voltage - Collector Emitter Breakdown (Max)	32 V
Wavelength	825 nm

PHOTOTRANSISTOR 450 TO 1040 NM

Part	Mounting Type	Wavelength	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Viewing Angle	Operating Temperature [Max]	Operating Temperature [Min]	Current - Dark (Id) (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max)	Orientation
Vishay Semiconductor Opto Division BPW17N	Through Hole	825 nm	Radial	32 V	24 °	100 °C	-40 °C	200 nA	100 mW	1 mA	Top View

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Phototransistors 825nm Top View Radial

Technical documentation and resources