AONS660A70F

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 1.7A/9.6A 8DFN

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 1.7A/9.6A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AONS660A70F

Current - Continuous Drain (Id) @ 25°C	1.7 A, 9.6 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	138 W, 4.1 W
Rds On (Max) @ Id, Vgs	660 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs
Alpha & Omega Semiconductor Inc. AONS660A70F	Surface Mount	900 pF	700 V	N-Channel	10 V	4 V	14.5 nC	-55 °C	150 °C	4.1 W 138 W	8-PowerVDFN	1.7 A 9.6 A	MOSFET (Metal Oxide)	20 V	660 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 700 V 1.7A (Ta), 9.6A (Tc) 4.1W (Ta), 138W (Tc) Surface Mount 8-DFN-EP (5x6)

Technical documentation and resources