AOW360A70

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 12A TO262

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 12A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	AOW360A70

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1360 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
Alpha & Omega Semiconductor Inc. AOW360A70	700 V	10 V	N-Channel	Through Hole	360 mOhm	1360 pF	20 V	TO-262	12 A	MOSFET (Metal Oxide)	4 V	22.5 nC	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	150 °C	156 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 0.99

General part information

N-Channel 700 V 12A (Tc) 156W (Tc) Through Hole TO-262

Technical documentation and resources