
EM 2BV1
ActiveSanken Electric USA Inc.
DIODE GEN PURP 800V 1.2A AXIAL
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EM 2BV1
ActiveSanken Electric USA Inc.
DIODE GEN PURP 800V 1.2A AXIAL
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | EM 2BV1 | 
|---|---|
| Current - Average Rectified (Io) | 1.2 A | 
| Current - Reverse Leakage @ Vr | 10 µA | 
| Mounting Type | Through Hole | 
| Operating Temperature - Junction [Max] | 150 °C | 
| Operating Temperature - Junction [Min] | -40 °C | 
| Package / Case | Axial | 
| Speed | Standard Recovery >500ns | 
| Speed | 200 mA | 
| Technology | Standard | 
| Voltage - DC Reverse (Vr) (Max) [Max] | 800 V | 
| Voltage - Forward (Vf) (Max) @ If [Max] | 920 mV | 
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.30 | |
| 10 | $ 0.82 | |||
| 100 | $ 0.54 | |||
| 500 | $ 0.42 | |||
Description
General part information
EM 2 Series
Diode 800 V 1.2A Through Hole
Documents
Technical documentation and resources