TSN520M60 S4G

Obsolete

Taiwan Semiconductor Corporation

DIODE GEN PURP 60V 20A 8DFN

Search across all available documentation for this part.

Obsolete

Taiwan Semiconductor Corporation

DIODE GEN PURP 60V 20A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSN520M60 S4G

Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	8-PowerLDFN
Speed	200 mA, 500 ns
Supplier Device Package	8-PDFN (5x6)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	580 mV

Part	Current - Reverse Leakage @ Vr	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Technology	Mounting Type	Package / Case	Voltage - Forward (Vf) (Max) @ If
Taiwan Semiconductor Corporation TSN520M60 S4G	500 µA	200 mA 500 ns	150 °C	-55 °C	60 V	8-PDFN (5x6)	Standard	Surface Mount	8-PowerLDFN	580 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 60 V 20A Surface Mount 8-PDFN (5x6)

Technical documentation and resources

No documents available