IPAW70R600CEXKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 700V 10.5A TO220-31

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Obsolete

Infineon Technologies

MOSFET N-CH 700V 10.5A TO220-31

Technical Specifications

Parameters and characteristics for this part

Specification	IPAW70R600CEXKSA1

Current - Continuous Drain (Id) @ 25°C	10.5 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	474 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	86 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	PG-TO220-3-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPAW70R950CEXKSA1	MOSFET (Metal Oxide)	150 °C	-40 °C	328 pF	N-Channel	3.5 V	10 V	68 W	TO-220-3 Full Pack	PG-TO220-3-FP	15.3 nC	Through Hole	700 V	950 mOhm	20 V	7.4 A
Infineon Technologies IPAW70R600CEXKSA1	MOSFET (Metal Oxide)	150 °C	-40 °C	474 pF	N-Channel	3.5 V	10 V	86 W	TO-220-3 Full Pack	PG-TO220-3-FP		Through Hole	700 V	600 mOhm	20 V	10.5 A	22 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 700 V 10.5A (Tc) 86W (Tc) Through Hole PG-TO220-3-FP

Technical documentation and resources