IRF7413ZTRPBF

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Infineon Technologies

MOSFET N-CH 30V 13A 8SO

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Infineon Technologies

MOSFET N-CH 30V 13A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7413ZTRPBF

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	14 nC
Input Capacitance (Ciss) (Max) @ Vds	1210 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.25 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Vgs (Max)
Infineon Technologies IRF7413ZTRPBF	1210 pF	13 A	Surface Mount	8-SOIC	3.9 mm	0.154 in	10 mOhm	4.5 V 10 V	2.5 W	N-Channel	14 nC	MOSFET (Metal Oxide)	8-SO	30 V	-55 °C	150 °C	2.25 V	20 V

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