IPD170N04NGBTMA1

Obsolete

Infineon Technologies

MOSFET N-CH 40V 30A TO252-3

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Obsolete

Infineon Technologies

MOSFET N-CH 40V 30A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPD170N04NGBTMA1

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	880 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology
Infineon Technologies IPD170N04NGBTMA1	-55 °C	175 ░C	4 V	30 A	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	11 nC	PG-TO252-3	40 V	Surface Mount	10 V	N-Channel	31 W	880 pF	17 mOhm	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 30A (Tc) 31W (Tc) Surface Mount PG-TO252-3

Technical documentation and resources