TN2124K1-G
ActiveMOSFET, N-CH, 240V, 0.134A, SOT-23 ROHS COMPLIANT: YES
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TN2124K1-G
ActiveMOSFET, N-CH, 240V, 0.134A, SOT-23 ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TN2124K1-G | TN2124 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 134 mA | 134 mA |
| Drain to Source Voltage (Vdss) | 240 V | 240 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 3 V | 3 - 4.5 V |
| FET Type | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF | 50 pF |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 360 mW | 360 mW |
| Rds On (Max) @ Id, Vgs | 15 Ohm | 15 Ohm |
| Supplier Device Package | TO-236AB (SOT23) | TO-236AB (SOT23) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 2 V | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.86 | |
| 25 | $ 0.72 | |||
| 100 | $ 0.64 | |||
| Digi-Reel® | 1 | $ 0.86 | ||
| 25 | $ 0.72 | |||
| 100 | $ 0.64 | |||
| Tape & Reel (TR) | 3000 | $ 0.64 | ||
| Microchip Direct | T/R | 1 | $ 0.86 | |
| 25 | $ 0.72 | |||
| 100 | $ 0.64 | |||
| 1000 | $ 0.54 | |||
| 5000 | $ 0.50 | |||
| 10000 | $ 0.46 | |||
| Newark | Each (Supplied on Full Reel) | 1 | $ 0.67 | |
TN2124 Series
MOSFET, N-Channel Enhancement-Mode, 240V, 15 Ohm
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Technology | Package / Case | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TN2124K1-G | |||||||||||||||
Microchip Technology TN2124K1-G | |||||||||||||||
Microchip Technology TN2124K1-G | -55 °C | 150 °C | 20 V | MOSFET (Metal Oxide) | SC-59, SOT-23-3, TO-236-3 | 134 mA | Surface Mount | 3 V, 4.5 V | TO-236AB (SOT23) | 240 V | 15 Ohm | 2 V | 360 mW | 50 pF | N-Channel |
Description
General part information
TN2124 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources