2N7002EY

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ANBON SEMICONDUCTOR (INT'L) LIMITED

N-CHANNEL SMD MOSFET ESD PROTECT

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ANBON SEMICONDUCTOR (INT'L) LIMITED

N-CHANNEL SMD MOSFET ESD PROTECT

Technical Specifications

Parameters and characteristics for this part

Specification	2N7002EY

Current - Continuous Drain (Id) @ 25°C	340 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	18 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

N-CHANNEL SMD MOSFET ESD PROTECT

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]
ANBON SEMICONDUCTOR (INT'L) LIMITED 2N7002EY	340 mA	Surface Mount	5 Ohm	SC-59, SOT-23-3, TO-236-3	20 V	4.5 V, 10 V	150 °C	2.5 V	350 mW	MOSFET (Metal Oxide)	2.4 nC	N-Channel	60 V	SOT-23	18 pF

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General part information

N-Channel 60 V 340mA (Ta) 350mW (Ta) Surface Mount SOT-23

Technical documentation and resources