IPB140N08S404ATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 80V 140A TO263-7

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Obsolete

Infineon Technologies

MOSFET N-CH 80V 140A TO263-7

Technical Specifications

Parameters and characteristics for this part

Specification	IPB140N08S404ATMA1

Current - Continuous Drain (Id) @ 25°C	140 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	5500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max)	161 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	PG-TO263-7-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Grade	Qualification	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs
Infineon Technologies IPB140N08S404ATMA1	80 V	161 W	D2PAK TO-263-7	80 nC	-55 °C	175 ░C	10 V	MOSFET (Metal Oxide)	140 A	N-Channel	PG-TO263-7-3	Automotive	AEC-Q101	Surface Mount	20 V	4 V	5500 pF	4.2 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 80 V 140A (Tc) 161W (Tc) Surface Mount PG-TO263-7-3

Technical documentation and resources