RN1971FE(TE85L,F)

Obsolete

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

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Obsolete

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Technical Specifications

Parameters and characteristics for this part

Specification	RN1971FE(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	100 mW
Supplier Device Package	ES6
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Transistor Type	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage RN1971TE85LF	200 mW	100 nA	6-TSSOP SC-88 SOT-363	US6	300 mV	250 MHz	2 NPN - Pre-Biased (Dual)	100 mA	Surface Mount	120	50 V
Toshiba Semiconductor and Storage RN1971FE(TE85L,F)	100 mW	100 nA	SOT-563 SOT-666	ES6	300 mV	250 MHz	2 NPN - Pre-Biased (Dual)	100 mA	Surface Mount	120	50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Technical documentation and resources