IXFN62N80Q3

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IXYS

MOSFET N-CH 800V 49A SOT227B

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IXYS

MOSFET N-CH 800V 49A SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN62N80Q3

Current - Continuous Drain (Id) @ 25°C	49 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	270 nC
Input Capacitance (Ciss) (Max) @ Vds	13600 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	960 W
Rds On (Max) @ Id, Vgs	140 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Technology
IXYS IXFN62N80Q3	800 V	N-Channel	SOT-227-4 miniBLOC	960 W	270 nC	SOT-227B	10 V	13600 pF	140 mOhm	-55 °C	150 °C	6.5 V	49 A	30 V	Chassis Mount	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 43.43

General part information

N-Channel 800 V 49A (Tc) 960W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

No documents available