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STF7N65M6 - TO-220-F

STF7N65M6

Obsolete
STMicroelectronics

MOSFET N-CH 650V 5A TO220FP

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STF7N65M6 - TO-220-F

STF7N65M6

Obsolete
STMicroelectronics

MOSFET N-CH 650V 5A TO220FP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF7N65M6
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.9 nC
Input Capacitance (Ciss) (Max) @ Vds220 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)20 W
Rds On (Max) @ Id, Vgs990 mOhm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id3.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

STF7N105K5 Series

The new SuperMESH3™ series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH™ layout with a new optimized vertical structure. In addition to pushing on-resistance significantly down, special attention has been taken to ensure a very good dynamic performances coupled with a very large avalanche capability for the most demanding application.

Documents

Technical documentation and resources

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