2SC3324-BL(TE85L,F

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A TO236

Search across all available documentation for this part.

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A TO236

Technical Specifications

Parameters and characteristics for this part

Specification	2SC3324-BL(TE85L,F

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	350 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	150 mW
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

Part	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Package / Case	Operating Temperature	Transistor Type	Mounting Type	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage 2SC3324-BL(TE85L,F	100 MHz	300 mV	350 hFE	100 nA	150 mW	SC-59 SOT-23-3 TO-236-3	125 ¯C	NPN	Surface Mount	100 mA	120 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 120 V 100 mA 100MHz 150 mW Surface Mount TO-236

Technical documentation and resources