DG2731DN-T1-E4

Obsolete

Vishay General Semiconductor - Diodes Division

IC SWITCH SPDT X 2 450MOHM 10DFN

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Obsolete

Vishay General Semiconductor - Diodes Division

IC SWITCH SPDT X 2 450MOHM 10DFN

Technical Specifications

Parameters and characteristics for this part

Specification	DG2731DN-T1-E4

Channel Capacitance (CS(off), CD(off)) [custom]	104 pF
Channel Capacitance (CS(off), CD(off)) [custom]	104 pF
Channel-to-Channel Matching (ΔRon)	30 mOhm
Charge Injection	9 pC
Crosstalk	-75 dB
Current - Leakage (IS(off)) (Max)	1 nA
Mounting Type	Surface Mount
Multiplexer/Demultiplexer Circuit	2:1
Number of Circuits	2
On-State Resistance (Max) [Max]	450 mOhm
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	10-VFDFN Exposed Pad
Supplier Device Package	10-DFN (3x3)
Switch Circuit	SPDT
Switch Time (Ton, Toff) (Max) [custom]	30 ns
Switch Time (Ton, Toff) (Max) [custom]	110 ns
Voltage - Supply, Single (V+) [Max]	4.3 V
Voltage - Supply, Single (V+) [Min]	1.65 V

Part	Multiplexer/Demultiplexer Circuit	Channel-to-Channel Matching (ΔRon)	Package / Case	Channel Capacitance (CS(off), CD(off)) [custom]	Channel Capacitance (CS(off), CD(off)) [custom]	On-State Resistance (Max) [Max]	Supplier Device Package	Switch Time (Ton, Toff) (Max) [custom]	Switch Time (Ton, Toff) (Max) [custom]	Mounting Type	Switch Circuit	Current - Leakage (IS(off)) (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Charge Injection	Crosstalk	Voltage - Supply, Single (V+) [Max]	Voltage - Supply, Single (V+) [Min]	Number of Circuits
Vishay General Semiconductor - Diodes Division DG2731DN-T1-E4	2:1	30 mOhm	10-VFDFN Exposed Pad	104 pF	104 pF	450 mOhm	10-DFN (3x3)	30 ns	110 ns	Surface Mount	SPDT	1 nA	85 °C	-40 °C	9 pC	-75 dB	4.3 V	1.65 V	2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

2 Circuit IC Switch 2:1 450mOhm 10-DFN (3x3)

Technical documentation and resources