Specification	PMT200EN,135

Current - Continuous Drain (Id) (Ta)	1.8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	10 nC
Input Capacitance (Ciss) (Max)	475 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-261AA, TO-261-4
Package Name	SC-73
Power Dissipation (Max)	800 mW, 8.3 W
Rds On (Max)	235 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

PMT2 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Vgs (Max)	Mounting Type	FET Type	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Vgs(th) (Max)	Technology
NXP USA Inc. PMT29EN,115	-55 °C	150 °C	29 mOhm	6 A	492 pF	10 V	4.5 V	SC-73	20 V	Surface Mount	N-Channel	TO-261-4 TO-261AA	8.33 W 820 mW	30 V	11 nC	2.5 V	MOSFET (Metal Oxide)
NXP USA Inc. PMT21EN,135	-55 °C	150 °C	21 mOhm	7.4 A	588 pF	10 V	4.5 V	SC-73	20 V	Surface Mount	N-Channel	TO-261-4 TO-261AA	8.33 W 820 mW	30 V	14.4 nC	2.5 V	MOSFET (Metal Oxide)
NXP USA Inc. PMT200EN,115	-55 °C	150 °C	235 mOhm	1.8 A	475 pF	10 V	4.5 V	SC-73	20 V	Surface Mount	N-Channel	TO-261-4 TO-261AA	8.3 W 800 mW	100 V	10 nC	2.5 V	MOSFET (Metal Oxide)
NXP USA Inc. PMT200EN,135	-55 °C	150 °C	235 mOhm	1.8 A	475 pF	10 V	4.5 V	SC-73	20 V	Surface Mount	N-Channel	TO-261-4 TO-261AA	8.3 W 800 mW	100 V	10 nC	2.5 V	MOSFET (Metal Oxide)

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