IXTR90P10P

Obsolete

IXYS

MOSFET P-CH 100V 57A ISOPLUS247

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Obsolete

IXYS

MOSFET P-CH 100V 57A ISOPLUS247

Technical Specifications

Parameters and characteristics for this part

Specification	IXTR90P10P

Current - Continuous Drain (Id) @ 25°C	57 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	5800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	ISOPLUS247™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max) [Max]
IXYS IXTR90P10P	TO-247-3	-55 °C	150 °C	27 mOhm	P-Channel	5800 pF	MOSFET (Metal Oxide)	4 V	57 A	Through Hole	120 nC	20 V	100 V	10 V	ISOPLUS247™	190 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 100 V 57A (Tc) 190W (Tc) Through Hole ISOPLUS247™

Technical documentation and resources

No documents available