Specification	TQM056NH04LCR RLG

Current - Continuous Drain (Id) (Ta)	17 A
Current - Continuous Drain (Id) (Tc)	54 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	45.6 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Length	5 mm
Package Name	8-PDFN
Package Width	6 mm
Power Dissipation (Max)	78.9 W
Qualification	AEC-Q101
Rds On (Max)	5.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max)	2.2 V

TQM056 Series

Part	Vgs (Max)	Vgs(th) (Max)	Mounting Type	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Package / Case	Gate Charge (Max)	Rds On (Max)	Qualification	Grade	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Technology	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Package Length	Package Name	Package Width
Taiwan Semiconductor Corporation TQM056NH04LCR RLG	16 V	2.2 V	Surface Mount	17 A	54 A	8-PowerTDFN	45.6 nC	5.6 mOhm	AEC-Q101	Automotive	10 V	4.5 V	78.9 W	MOSFET (Metal Oxide)	N-Channel	40 V	-55 °C	175 °C	5 mm	8-PDFN	6 mm

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