DS28E02P+
ActiveAnalog Devices Inc./Maxim Integrated
IC EEPROM 1KBIT 1WIRE 6TSOC
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DS28E02P+
ActiveAnalog Devices Inc./Maxim Integrated
IC EEPROM 1KBIT 1WIRE 6TSOC
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics commom to parts in this series
Specification | DS28E02P+ | DS28E02 Series |
---|---|---|
Access Time | 2 µs | 2 µs |
Memory Format | EEPROM | EEPROM |
Memory Interface | 1-Wire® | 1-Wire® |
Memory Organization | 256 x 4 | 256 x 4 |
Memory Size | 128 B | 128 B |
Memory Type | Non-Volatile | Non-Volatile |
Mounting Type | Surface Mount | Surface Mount |
Operating Temperature [Max] | 85 C | 85 C |
Operating Temperature [Min] | -20 °C | -20 °C |
Package / Case | 6-SMD, J-Lead | 6-SMD, J-Lead |
Supplier Device Package | 6-TSOC | 6-TSOC, 6-TDFN (3x3) |
Technology | EEPROM | EEPROM |
Voltage - Supply [Max] | 3.65 V | 3.65 V |
Voltage - Supply [Min] | 1.75 V | 1.75 V |
Write Cycle Time - Word, Page | 25 ms | 25 ms |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Distributor | Package | Quantity | $ | |
---|---|---|---|---|
Digikey | Tube | 1 | $ 3.19 | |
10 | $ 2.12 | |||
25 | $ 1.84 | |||
100 | $ 1.52 | |||
250 | $ 1.51 |
DS28E02 Series
IC EEPROM 1KBIT 1-WIRE 6TSOC
Part | Memory Size | Write Cycle Time - Word, Page | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Memory Format | Memory Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Organization | Package / Case | Access Time | Technology | Supplier Device Package | Memory Interface |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated DS28E02P-W10+6T | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 6-SMD, J-Lead | 2 µs | EEPROM | 6-TSOC | 1-Wire® |
Analog Devices Inc./Maxim Integrated DS28E02P-W10+1 | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 6-SMD, J-Lead | 2 µs | EEPROM | 6-TSOC | 1-Wire® |
Analog Devices Inc./Maxim Integrated DS28E02Q-W01+3T | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 2 µs | EEPROM | 6-TDFN (3x3) | 1-Wire® | |
Analog Devices Inc./Maxim Integrated DS28E02P-W10+4 | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 6-SMD, J-Lead | 2 µs | EEPROM | 6-TSOC | 1-Wire® |
Analog Devices Inc./Maxim Integrated DS28E02P-W10+9T | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 6-SMD, J-Lead | 2 µs | EEPROM | 6-TSOC | 1-Wire® |
Analog Devices Inc./Maxim Integrated DS28E02P-W13+1T | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 6-SMD, J-Lead | 2 µs | EEPROM | 6-TSOC | 1-Wire® |
Analog Devices Inc./Maxim Integrated DS28E02Q-W01+4T | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 2 µs | EEPROM | 6-TDFN (3x3) | 1-Wire® | |
Analog Devices Inc./Maxim Integrated DS28E02P+ | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 6-SMD, J-Lead | 2 µs | EEPROM | 6-TSOC | 1-Wire® |
Analog Devices Inc./Maxim Integrated DS28E02P-W10+5 | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 6-SMD, J-Lead | 2 µs | EEPROM | 6-TSOC | 1-Wire® |
Analog Devices Inc./Maxim Integrated DS28E02Q-W01+2T | 128 B | 25 ms | -20 °C | 85 C | Surface Mount | EEPROM | Non-Volatile | 3.65 V | 1.75 V | 256 x 4 | 2 µs | EEPROM | 6-TDFN (3x3) | 1-Wire® |
Description
General part information
DS28E02 Series
EEPROM Memory IC 1Kbit 1-Wire® 2 µs 6-TSOC
Documents
Technical documentation and resources