FF3MR12KM1HOSA1

Obsolete

Infineon Technologies

SIC 2N-CH 1200V 375A AG-62MM

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Obsolete

Infineon Technologies

SIC 2N-CH 1200V 375A AG-62MM

Technical Specifications

Parameters and characteristics for this part

Specification	FF3MR12KM1HOSA1

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	375 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs [Max]	1000 nC
Input Capacitance (Ciss) (Max) @ Vds	29800 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	2.83 mOhm
Supplier Device Package	AG-62MM
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id [Max]	5.15 V

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Vgs(th) (Max) @ Id [Max]	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]
Infineon Technologies FF3MR12KM1PHOSA1	375 A	Module	2.83 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)	29800 pF	2 N-Channel (Half Bridge)	5.15 V	Chassis Mount	AG-62MM	1000 nC	150 °C	-40 °C
Infineon Technologies FF3MR12KM1HOSA1	375 A	Module	2.83 mOhm	1200 V	1.2 kV	Silicon Carbide (SiC)	29800 pF	2 N-Channel (Half Bridge)	5.15 V	Chassis Mount	AG-62MM	1000 nC	150 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 1200V (1.2kV) 375A (Tc) Chassis Mount AG-62MM

Technical documentation and resources