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1N5404-G - DO-201AD

1N5404-G

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Comchip Technology

DIODE GEN PURP 400V 3A DO27

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1N5404-G - DO-201AD

1N5404-G

Active
Comchip Technology

DIODE GEN PURP 400V 3A DO27

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification1N5404-G
Current - Average Rectified (Io)3 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]125 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseDO-201AD, Axial
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageDO-27 (DO-201AD)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]400 V
Voltage - Forward (Vf) (Max) @ If [Max]950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.29
10$ 0.22
100$ 0.13
500$ 0.12
Tape & Box (TB) 1200$ 0.09

1N5404 Series

DIODE GEN PURP 400V 3A DO27

PartCurrent - Reverse Leakage @ VrOperating Temperature - Junction [Max]Operating Temperature - Junction [Min]Voltage - Forward (Vf) (Max) @ If [Max]SpeedSpeedPackage / CaseVoltage - DC Reverse (Vr) (Max) [Max]Supplier Device PackageTechnologyMounting TypeCurrent - Average Rectified (Io)
Comchip Technology
1N5404-G
5 µA
125 °C
-65 C
950 mV
Standard Recovery >500ns
200 mA
DO-201AD, Axial
400 V
DO-27 (DO-201AD)
Standard
Through Hole
3 A

Description

General part information

1N5404 Series

Diode 400 V 3A Through Hole DO-27 (DO-201AD)

Documents

Technical documentation and resources

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