
1N5404-G
ActiveComchip Technology
DIODE GEN PURP 400V 3A DO27
Deep-Dive with AI
Search across all available documentation for this part.

1N5404-G
ActiveComchip Technology
DIODE GEN PURP 400V 3A DO27
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
Specification | 1N5404-G |
---|---|
Current - Average Rectified (Io) | 3 A |
Current - Reverse Leakage @ Vr | 5 µA |
Mounting Type | Through Hole |
Operating Temperature - Junction [Max] | 125 °C |
Operating Temperature - Junction [Min] | -65 C |
Package / Case | DO-201AD, Axial |
Speed | Standard Recovery >500ns |
Speed | 200 mA |
Supplier Device Package | DO-27 (DO-201AD) |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) [Max] | 400 V |
Voltage - Forward (Vf) (Max) @ If [Max] | 950 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Distributor | Package | Quantity | $ | |
---|---|---|---|---|
Digikey | Cut Tape (CT) | 1 | $ 0.29 | |
10 | $ 0.22 | |||
100 | $ 0.13 | |||
500 | $ 0.12 | |||
Tape & Box (TB) | 1200 | $ 0.09 |
1N5404 Series
DIODE GEN PURP 400V 3A DO27
Part | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - Forward (Vf) (Max) @ If [Max] | Speed | Speed | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Technology | Mounting Type | Current - Average Rectified (Io) |
---|---|---|---|---|---|---|---|---|---|---|---|---|
Comchip Technology 1N5404-G | 5 µA | 125 °C | -65 C | 950 mV | Standard Recovery >500ns | 200 mA | DO-201AD, Axial | 400 V | DO-27 (DO-201AD) | Standard | Through Hole | 3 A |
Description
General part information
1N5404 Series
Diode 400 V 3A Through Hole DO-27 (DO-201AD)
Documents
Technical documentation and resources
No documents available