IXFJ32N50Q

Obsolete

IXYS

MOSFET N-CH 500V 32A TO268

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 500V 32A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXFJ32N50Q

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	153 nC
Input Capacitance (Ciss) (Max) @ Vds	3950 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3, Short Tab
Power Dissipation (Max)	360 W
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	TO-268
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
IXYS IXFJ32N50
IXYS IXFJ32N50Q	MOSFET (Metal Oxide)	N-Channel	32 A	TO-268	20 V	10 V	150 mOhm	4 V	3950 pF	Through Hole	TO-220-3 Short Tab	500 V	153 nC	-55 °C	150 °C	360 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 32A (Tc) 360W (Tc) Through Hole TO-268

Technical documentation and resources

No documents available