IXFX38N80Q2

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IXYS

MOSFET N-CH 800V 38A PLUS247-3

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IXYS

MOSFET N-CH 800V 38A PLUS247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX38N80Q2

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	190 nC
Input Capacitance (Ciss) (Max) @ Vds	8340 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	735 W
Rds On (Max) @ Id, Vgs	220 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]
IXYS IXFX38N80Q2	10 V	4.5 V	30 V	735 W	220 mOhm	TO-247-3 Variant	MOSFET (Metal Oxide)	PLUS247™-3	8340 pF	800 V	N-Channel	38 A	-55 °C	150 °C	Through Hole	190 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 38A (Tc) 735W (Tc) Through Hole PLUS247™-3

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